DiodesZetex Type P-Channel MOSFET, 197 mA, 250 V Enhancement, 6-Pin SOT-23 ZVP4525E6TA
- RS Stock No.:
- 751-5275
- Mfr. Part No.:
- ZVP4525E6TA
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
PHP398.05
(exc. VAT)
PHP445.82
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 210 unit(s) ready to ship from another location
- Plus 5,120 unit(s) shipping from January 02, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 10 | PHP39.805 | PHP398.05 |
| 20 - 40 | PHP39.01 | PHP390.10 |
| 50 - 90 | PHP38.23 | PHP382.30 |
| 100 - 190 | PHP37.466 | PHP374.66 |
| 200 + | PHP36.717 | PHP367.17 |
*price indicative
- RS Stock No.:
- 751-5275
- Mfr. Part No.:
- ZVP4525E6TA
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 197mA | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 18Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.1W | |
| Typical Gate Charge Qg @ Vgs | 2.45nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 40 V | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3mm | |
| Width | 1.75 mm | |
| Height | 1.3mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 197mA | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 18Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.1W | ||
Typical Gate Charge Qg @ Vgs 2.45nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 40 V | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 3mm | ||
Width 1.75 mm | ||
Height 1.3mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 100V to 450V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Related links
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