Infineon HEXFET Type N-Channel MOSFET, 1.2 A, 60 V Enhancement, 3-Pin SOT-23

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Subtotal 40 units (supplied on a continuous strip)*

PHP555.16

(exc. VAT)

PHP621.76

(inc. VAT)

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Units
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40 - 80PHP13.879
100 - 180PHP13.463
200 - 380PHP13.059
400 +PHP12.667

*price indicative

Packaging Options:
RS Stock No.:
725-9357P
Mfr. Part No.:
IRLML2060TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

1.2A

Maximum Drain Source Voltage Vds

60V

Package Type

SOT-23

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

480mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

1.25W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

0.67nC

Maximum Operating Temperature

150°C

Height

1.02mm

Length

3.04mm

Standards/Approvals

No

Automotive Standard

No

N-Channel Power MOSFET 60V to 80V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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