Infineon HEXFET N-Channel MOSFET, 1.2 A, 60 V Enhancement, 3-Pin SOT-23
- RS Stock No.:
- 725-9357P
- Mfr. Part No.:
- IRLML2060TRPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal 40 units (supplied on a continuous strip)*
PHP426.04
(exc. VAT)
PHP477.16
(inc. VAT)
FREE delivery for orders over ₱5,000.00
In Stock
- 26,140 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 40 - 80 | PHP10.651 |
| 100 - 180 | PHP10.331 |
| 200 - 380 | PHP10.021 |
| 400 + | PHP9.72 |
*price indicative
- RS Stock No.:
- 725-9357P
- Mfr. Part No.:
- IRLML2060TRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 1.2A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 480mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.25W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 0.67nC | |
| Maximum Gate Source Voltage Vgs | -16V, +16V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.04mm | |
| Width | 1.4mm | |
| Standards/Approvals | No | |
| Height | 1.02mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 1.2A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 480mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.25W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 0.67nC | ||
Maximum Gate Source Voltage Vgs -16V, +16V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 3.04mm | ||
Width 1.4mm | ||
Standards/Approvals No | ||
Height 1.02mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 60V Maximum Drain Source Voltage, 1.2A Maximum Continuous Drain Current - IRLML2060TRPBF
This MOSFET is a compact N-channel enhancement device intended for low-power switching in surface-mounted circuits. It offers moderate voltage handling and continuous current capacity for use in portable and space-constrained electronic assemblies, operating reliably across an extended temperature range.
Features and Benefits:
• Low Rds(on) of 480mΩ enables reduced conduction losses
• Maximum Vds 60V allows medium-voltage switching applications
• Continuous drain current 1.2A supports modest load currents
• Gate charge Qg 0.67nC enables faster gate-drive transitions
• Power dissipation rating 1.25W limits thermal rise under load
• Gate-source withstand 16V gives margin for drive variation
• Maximum Vds 60V allows medium-voltage switching applications
• Continuous drain current 1.2A supports modest load currents
• Gate charge Qg 0.67nC enables faster gate-drive transitions
• Power dissipation rating 1.25W limits thermal rise under load
• Gate-source withstand 16V gives margin for drive variation
Applications
• Suitable for DC switch control in battery-powered devices
• Ideal for small motor-driver circuits and load switching
• Used with logic-level drivers for efficient power conversion
• Can be used for signal-level power distribution on PCBs
• Suitable for compact power-management modules in instrumentation
• Ideal for small motor-driver circuits and load switching
• Used with logic-level drivers for efficient power conversion
• Can be used for signal-level power distribution on PCBs
• Suitable for compact power-management modules in instrumentation
What temperature conditions can it withstand during operation?
It is specified to function down to -55°C and up to 150°C for use in environments with wide thermal variation.
How does the package affect board layout and assembly?
The SOT-23 surface-mount package minimises board footprint and eases automated placement for high-density assemblies.
What electrical stress limits should designers consider for gate drive?
The maximum gate-source voltage is 16V, so gate drivers should remain within this value to avoid over-stressing the gate.
How does its switching behaviour impact thermal management?
With a typical gate charge of 0.67nC and 1.25W power dissipation, duty cycle and switching frequency must be managed to prevent excessive junction heating.
Related links
- RS PRO 150 mm Stainless Steel Scissors
- Stanley Tylon 8m Tape Measure, Metric & Imperial
- Belden Cat6 Ethernet Cable Grey PVC Sheath, 100m
- Unistrut 41 x 41mm Slotted Galvanised Steel Strut, 2m Long
- Arduino Uno Rev 3 SMD
- RS PRO Phillips Screwdriver 150 mm Blade, 270 mm Overall
- RS PRO Combination Pliers Straight Tip, 34mm Jaw
- RS PRO Stainless Steel Perforated Metal Sheet 500mm x 500mm, 0.55mm Thick