N-Channel MOSFET, 23 A, 100 V, 3-Pin DPAK STMicroelectronics STD15NF10T4
- RS Stock No.:
- 714-1060
- Mfr. Part No.:
- STD15NF10T4
- Manufacturer:
- STMicroelectronics
Subtotal (1 pack of 5 units)**
PHP301.14
(exc. VAT)
PHP337.28
(inc. VAT)
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for over PHP7,000.00 (ex VAT)
Units | Per Unit | Per Pack** |
---|---|---|
5 - 20 | PHP60.228 | PHP301.14 |
25 - 95 | PHP58.42 | PHP292.10 |
100 - 245 | PHP56.668 | PHP283.34 |
250 - 495 | PHP54.968 | PHP274.84 |
500 + | PHP53.318 | PHP266.59 |
**price indicative
- RS Stock No.:
- 714-1060
- Mfr. Part No.:
- STD15NF10T4
- Manufacturer:
- STMicroelectronics
Select all | Attribute | Value |
---|---|---|
Manufacturer | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 23 A | |
Maximum Drain Source Voltage | 100 V | |
Package Type | DPAK (TO-252) | |
Series | STripFET | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 80 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 70 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +175 °C | |
Length | 6.6mm | |
Width | 6.2mm | |
Typical Gate Charge @ Vgs | 30 nC @ 10 V | |
Transistor Material | Si | |
Minimum Operating Temperature | -55 °C | |
Height | 2.4mm | |
Select all | ||
---|---|---|
Manufacturer STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 23 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type DPAK (TO-252) | ||
Series STripFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 80 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 70 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Length 6.6mm | ||
Width 6.2mm | ||
Typical Gate Charge @ Vgs 30 nC @ 10 V | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 2.4mm | ||
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