IXYS HiperFET Type N-Channel MOSFET, 48 A, 500 V Enhancement, 3-Pin TO-264 IXFK48N50
- RS Stock No.:
- 711-5367
- Distrelec Article No.:
- 302-53-350
- Mfr. Part No.:
- IXFK48N50
- Manufacturer:
- IXYS
This image is representative of the product range
Bulk discount available
Subtotal (1 unit)*
PHP1,794.36
(exc. VAT)
PHP2,009.68
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 9 unit(s) ready to ship from another location
- Plus 323 unit(s) shipping from January 02, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 1 - 9 | PHP1,794.36 |
| 10 - 49 | PHP1,793.59 |
| 50 - 99 | PHP1,792.82 |
| 100 - 249 | PHP1,650.96 |
| 250 + | PHP1,650.16 |
*price indicative
- RS Stock No.:
- 711-5367
- Distrelec Article No.:
- 302-53-350
- Mfr. Part No.:
- IXFK48N50
- Manufacturer:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 48A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-264 | |
| Series | HiperFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 270nC | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 500W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 19.96mm | |
| Width | 5.13 mm | |
| Standards/Approvals | No | |
| Height | 26.16mm | |
| Automotive Standard | No | |
| Distrelec Product Id | 30253350 | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 48A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-264 | ||
Series HiperFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 270nC | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 500W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 19.96mm | ||
Width 5.13 mm | ||
Standards/Approvals No | ||
Height 26.16mm | ||
Automotive Standard No | ||
Distrelec Product Id 30253350 | ||
N-channel Power MOSFET, IXYS HiperFET™ Series
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Related links
- IXYS HiperFET Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-264
- IXYS HiperFET Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-264 IXFK66N85X
- IXYS HiperFET Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-268
- IXYS HiperFET Type N-Channel Power MOSFET 250 V Enhancement, 3-Pin TO-247
- IXYS HiperFET Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- IXYS HiperFET Type N-Channel MOSFET 850 V Enhancement, 3-Pin PLUS264
- IXYS HiperFET Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-263
- IXYS HiperFET Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-268 IXFT60N65X2HV
