IXYS Type N-Channel MOSFET, 26 A, 1200 V Enhancement, 3-Pin TO-264
- RS Stock No.:
- 711-5360P
- Mfr. Part No.:
- IXFK26N120P
- Manufacturer:
- IXYS
This image is representative of the product range
Bulk discount available
Subtotal 10 units (supplied in a tube)*
PHP21,122.20
(exc. VAT)
PHP23,656.90
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 410 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 10 - 49 | PHP2,112.22 |
| 50 - 99 | PHP2,048.85 |
| 100 - 249 | PHP1,987.38 |
| 250 + | PHP1,927.75 |
*price indicative
- RS Stock No.:
- 711-5360P
- Mfr. Part No.:
- IXFK26N120P
- Manufacturer:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 26A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-264 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 460mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 225nC | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 960W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.13 mm | |
| Height | 26.16mm | |
| Length | 19.96mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Distrelec Product Id | 30253346 | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 26A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-264 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 460mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 225nC | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 960W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Width 5.13 mm | ||
Height 26.16mm | ||
Length 19.96mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Distrelec Product Id 30253346 | ||
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Related links
- IXYS Type N-Channel MOSFET 1200 V Enhancement, 3-Pin TO-264
- IXYS Type N-Channel MOSFET 1200 V Enhancement, 3-Pin TO-264 IXFK26N120P
- IXYS Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-264
- IXYS Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-264
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-264
- IXYS Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-264
- IXYS Type N-Channel MOSFET 300 V Enhancement, 3-Pin TO-264
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-264