P-Channel MOSFET, 1.8 A, 60 V, 3-Pin SOT-223 Vishay IRFL9014TRPBF
- RS Stock No.:
- 710-4654P
- Mfr. Part No.:
- IRFL9014TRPBF
- Manufacturer:
- Vishay
Bulk discount available
Subtotal (2 reels of 10 units)**. Quantities below 150 on continuous strip
PHP603.66
(exc. VAT)
PHP676.10
(inc. VAT)
Temporarily out of stock - back order for despatch 23/06/2025, delivery within 10 working days from desptach date*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for over PHP7,000.00 (ex VAT)
Units | Per Unit |
|---|---|
| 20 - 40 | PHP29.602 |
| 50 - 90 | PHP28.964 |
| 100 - 190 | PHP28.383 |
| 200 + | PHP27.802 |
**price indicative
- RS Stock No.:
- 710-4654P
- Mfr. Part No.:
- IRFL9014TRPBF
- Manufacturer:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | Vishay | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 1.8 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | SOT-223 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 500 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 2 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Width | 3.7mm | |
| Maximum Operating Temperature | +150 °C | |
| Length | 6.7mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 12 nC @ 10 V | |
| Height | 1.45mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Manufacturer Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 1.8 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOT-223 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 500 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 2 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Width 3.7mm | ||
Maximum Operating Temperature +150 °C | ||
Length 6.7mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 12 nC @ 10 V | ||
Height 1.45mm | ||
Minimum Operating Temperature -55 °C | ||