Vishay IRLI N-Channel MOSFET, 9.9 A, 200 V Enhancement, 3-Pin TO-220 IRLI640GPBF
- RS Stock No.:
- 708-4872
- Mfr. Part No.:
- IRLI640GPBF
- Manufacturer:
- Vishay
This image is representative of the product range
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View bulk pricing optionsSubtotal (1 pack of 5 units)*
PHP809.19
(exc. VAT)
PHP906.295
(inc. VAT)
FREE delivery for orders over ₱5,000.00
In Stock
- Plus 355 unit(s) shipping from September 21, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 20 | PHP161.838 | PHP809.19 |
| 25 - 95 | PHP129.47 | PHP647.35 |
| 100 - 245 | PHP116.334 | PHP581.67 |
| 250 - 495 | PHP114.094 | PHP570.47 |
| 500 + | PHP111.636 | PHP558.18 |
*price indicative
- RS Stock No.:
- 708-4872
- Mfr. Part No.:
- IRLI640GPBF
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9.9A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | IRLI | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 40W | |
| Forward Voltage Vf | 2V | |
| Maximum Gate Source Voltage Vgs | 10V | |
| Typical Gate Charge Qg @ Vgs | 66nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 4.8mm | |
| Width | 10.3mm | |
| Height | 9.8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9.9A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series IRLI | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 40W | ||
Forward Voltage Vf 2V | ||
Maximum Gate Source Voltage Vgs 10V | ||
Typical Gate Charge Qg @ Vgs 66nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 4.8mm | ||
Width 10.3mm | ||
Height 9.8mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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