DiodesZetex ZXMN10A08E6 Type N-Channel MOSFET, 1.9 A, 100 V Enhancement, 6-Pin SOT-23 ZXMN10A08E6TA
- RS Stock No.:
- 708-2633
- Mfr. Part No.:
- ZXMN10A08E6TA
- Manufacturer:
- DiodesZetex
This image is representative of the product range
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Subtotal (1 pack of 10 units)*
PHP260.68
(exc. VAT)
PHP291.96
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 5,760 unit(s) shipping from December 29, 2025
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Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 10 | PHP26.068 | PHP260.68 |
| 20 - 40 | PHP25.285 | PHP252.85 |
| 50 - 90 | PHP24.528 | PHP245.28 |
| 100 - 190 | PHP23.792 | PHP237.92 |
| 200 + | PHP23.079 | PHP230.79 |
*price indicative
- RS Stock No.:
- 708-2633
- Mfr. Part No.:
- ZXMN10A08E6TA
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1.9A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | ZXMN10A08E6 | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 300mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1.7W | |
| Typical Gate Charge Qg @ Vgs | 4.2nC | |
| Forward Voltage Vf | 0.87V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 1.75 mm | |
| Height | 1.3mm | |
| Length | 3mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1.9A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series ZXMN10A08E6 | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 300mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1.7W | ||
Typical Gate Charge Qg @ Vgs 4.2nC | ||
Forward Voltage Vf 0.87V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 1.75 mm | ||
Height 1.3mm | ||
Length 3mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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