DiodesZetex Type N-Channel MOSFET, 7 A, 40 V Enhancement, 4-Pin SOT-223 ZXMN4A06GTA
- RS Stock No.:
- 708-2585
- Mfr. Part No.:
- ZXMN4A06GTA
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP322.23
(exc. VAT)
PHP360.90
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 10 unit(s) ready to ship from another location
- Plus 6,430 unit(s) shipping from January 01, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 20 | PHP64.446 | PHP322.23 |
| 25 - 95 | PHP62.514 | PHP312.57 |
| 100 - 245 | PHP60.634 | PHP303.17 |
| 250 - 495 | PHP58.814 | PHP294.07 |
| 500 + | PHP57.048 | PHP285.24 |
*price indicative
- RS Stock No.:
- 708-2585
- Mfr. Part No.:
- ZXMN4A06GTA
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 75mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 3.9W | |
| Typical Gate Charge Qg @ Vgs | 18.2nC | |
| Forward Voltage Vf | 0.95V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 3.7 mm | |
| Length | 6.7mm | |
| Height | 1.8mm | |
| Automotive Standard | AEC-Q100 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 75mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 3.9W | ||
Typical Gate Charge Qg @ Vgs 18.2nC | ||
Forward Voltage Vf 0.95V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 3.7 mm | ||
Length 6.7mm | ||
Height 1.8mm | ||
Automotive Standard AEC-Q100 | ||
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Related links
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