N-Channel MOSFET, 5.3 A, 60 V, 3-Pin SOT-223 Diodes Inc ZXMN6A08GTA
- RS Stock No.:
- 708-2497
- Mfr. Part No.:
- ZXMN6A08GTA
- Manufacturer:
- DiodesZetex
Bulk discount available
Subtotal (1 pack of 10 units)**
PHP295.96
(exc. VAT)
PHP331.48
(inc. VAT)
970 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for over PHP7,000.00 (ex VAT)
Units | Per Unit | Per Pack** |
---|---|---|
10 - 10 | PHP29.596 | PHP295.96 |
20 - 40 | PHP28.708 | PHP287.08 |
50 - 90 | PHP27.56 | PHP275.60 |
100 - 190 | PHP26.182 | PHP261.82 |
200 + | PHP24.611 | PHP246.11 |
**price indicative
- RS Stock No.:
- 708-2497
- Mfr. Part No.:
- ZXMN6A08GTA
- Manufacturer:
- DiodesZetex
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | DiodesZetex | |
Channel Type | N | |
Maximum Continuous Drain Current | 5.3 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | SOT-223 | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 150 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 3.9 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Length | 6.7mm | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 5.8 nC @ 10 V | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Width | 3.7mm | |
Minimum Operating Temperature | -55 °C | |
Height | 1.8mm | |
Select all | ||
---|---|---|
Manufacturer DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 5.3 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOT-223 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 150 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 3.9 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 6.7mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 5.8 nC @ 10 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Width 3.7mm | ||
Minimum Operating Temperature -55 °C | ||
Height 1.8mm | ||
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