onsemi NTF Type P-Channel MOSFET, 2.6 A, 60 V Enhancement, 4-Pin SOT-223 NTF2955T1G
- RS Stock No.:
- 688-9130
- Mfr. Part No.:
- NTF2955T1G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
PHP158.08
(exc. VAT)
PHP177.04
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 42 unit(s) ready to ship from another location
- Plus 80 unit(s) shipping from January 21, 2026
- Plus 7,384 unit(s) shipping from January 23, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 8 | PHP79.04 | PHP158.08 |
| 10 - 38 | PHP76.665 | PHP153.33 |
| 40 - 98 | PHP74.37 | PHP148.74 |
| 100 - 198 | PHP72.14 | PHP144.28 |
| 200 + | PHP69.965 | PHP139.93 |
*price indicative
- RS Stock No.:
- 688-9130
- Mfr. Part No.:
- NTF2955T1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.6A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | NTF | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 185mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.3W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 14.3nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 3.5 mm | |
| Length | 6.5mm | |
| Height | 1.57mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.6A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series NTF | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 185mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.3W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 14.3nC | ||
Maximum Operating Temperature 175°C | ||
Width 3.5 mm | ||
Length 6.5mm | ||
Height 1.57mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Related links
- onsemi NTF Type P-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223
- onsemi NTF Type P-Channel MOSFET 30 V Enhancement, 4-Pin SOT-223
- onsemi NTF Type P-Channel MOSFET 30 V Enhancement, 4-Pin SOT-223 NTF5P03T3G
- onsemi NTF Type P-Channel MOSFET 20 V Enhancement, 6-Pin TSOP
- onsemi NTF Type P-Channel MOSFET 20 V Enhancement, 6-Pin TSOP NTGS3441T1G
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223 BSP318SH6327XTSA1
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 4-Pin SOT-223