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Infineon HEXFET Type N-Channel MOSFET, 97 A, 100 V Enhancement, 3-Pin TO-220 IRFB4410ZPBF

RS Stock No.:: 688-6954
Mfr. Part No.:: IRFB4410ZPBF
Manufacturer:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 97 A, 100 V Enhancement, 3-Pin TO-220 IRFB4410ZPBF

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Bulk discount available

Subtotal (1 pack of 2 units)*

PHP228.97

(exc. VAT)

PHP256.446

(inc. VAT)

FREE delivery for orders over ₱3,000.00

In Stock

60 unit(s) ready to ship from another location
Plus 540 unit(s) shipping from April 21, 2026

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Units	Per Unit	Per Pack*
2 - 8	PHP114.485	PHP228.97
10 - 38	PHP111.055	PHP222.11
40 - 98	PHP107.71	PHP215.42
100 - 198	PHP104.49	PHP208.98
200 +	PHP101.345	PHP202.69

*price indicative

RS Stock No.:: 688-6954
Mfr. Part No.:: IRFB4410ZPBF
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	97A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-220
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	9mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	83nC
	Maximum Power Dissipation Pd	230W
	Forward Voltage Vf	1.3V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Length	10.66mm
	Height	9.02mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 97A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-220
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 9mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 83nC
	Maximum Power Dissipation Pd 230W
	Forward Voltage Vf 1.3V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Length 10.66mm
	Height 9.02mm
	Standards/Approvals No
	Automotive Standard No

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