Infineon HEXFET Type N-Channel MOSFET, 17 A, 150 V Enhancement, 3-Pin TO-220

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Subtotal (1 pack of 5 units)*

PHP486.65

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PHP545.05

(inc. VAT)

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Units
Per Unit
Per Pack*
5 - 20PHP97.33PHP486.65
25 - 95PHP94.41PHP472.05
100 - 245PHP91.578PHP457.89
250 - 495PHP88.83PHP444.15
500 +PHP86.166PHP430.83

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RS Stock No.:
688-6920
Mfr. Part No.:
IRFB4019PBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

17A

Maximum Drain Source Voltage Vds

150V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

95mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

13nC

Maximum Power Dissipation Pd

80W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

4.82 mm

Length

10.66mm

Height

9.02mm

Automotive Standard

No

Distrelec Product Id

304-43-451

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Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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