STMicroelectronics MDmesh, SuperMESH Type N-Channel MOSFET, 2.3 A, 500 V Enhancement, 3-Pin TO-252 STD3NK50ZT4
- RS Stock No.:
- 687-5178
- Mfr. Part No.:
- STD3NK50ZT4
- Manufacturer:
- STMicroelectronics
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Subtotal (1 pack of 10 units)*
PHP559.87
(exc. VAT)
PHP627.05
(inc. VAT)
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In Stock
- 3,220 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 10 | PHP55.987 | PHP559.87 |
| 20 - 40 | PHP54.308 | PHP543.08 |
| 50 - 90 | PHP52.679 | PHP526.79 |
| 100 - 190 | PHP51.097 | PHP510.97 |
| 200 + | PHP49.563 | PHP495.63 |
*price indicative
- RS Stock No.:
- 687-5178
- Mfr. Part No.:
- STD3NK50ZT4
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.3A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | MDmesh, SuperMESH | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.3Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Maximum Power Dissipation Pd | 45W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.4mm | |
| Width | 6.2 mm | |
| Length | 6.6mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.3A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series MDmesh, SuperMESH | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.3Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Maximum Power Dissipation Pd 45W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Height 2.4mm | ||
Width 6.2 mm | ||
Length 6.6mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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