IXYS Single Linear 1 N-Channel MOSFET, 22 A, 1 kV Enhancement, 3-Pin TO-264 IXTK22N100L
- RS Stock No.:
- 686-7852
- Mfr. Part No.:
- IXTK22N100L
- Manufacturer:
- IXYS
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 686-7852
- Mfr. Part No.:
- IXTK22N100L
- Manufacturer:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Transistor Configuration | Single | |
| Series | Linear | |
| Number of Elements per Chip | 1 | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 22 A | |
| Maximum Drain Source Voltage (Vds) | 1 kV | |
| Channel Mode | Enhancement | |
| Pin Count | 3 | |
| Package Type | TO-264 | |
| Height | 26.16 mm | |
| Length | 19.96 mm | |
| Maximum Drain Source Resistance (Rds) | 600 mΩ | |
| Maximum Gate Source Voltage (Vgs) | 30 V, -30 V | |
| Maximum Operating Temperature | 150 °C | |
| Maximum Power Dissipation (Pd) | 700 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Through Hole | |
| Width | 5.13 mm | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Transistor Configuration Single | ||
Series Linear | ||
Number of Elements per Chip 1 | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 22 A | ||
Maximum Drain Source Voltage (Vds) 1 kV | ||
Channel Mode Enhancement | ||
Pin Count 3 | ||
Package Type TO-264 | ||
Height 26.16 mm | ||
Length 19.96 mm | ||
Maximum Drain Source Resistance (Rds) 600 mΩ | ||
Maximum Gate Source Voltage (Vgs) 30 V, -30 V | ||
Maximum Operating Temperature 150 °C | ||
Maximum Power Dissipation (Pd) 700 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Through Hole | ||
Width 5.13 mm | ||
N-Channel Power MOSFET, IXYS Linear Series
N-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
Related links
- IXYS Single Linear 1 N-Channel MOSFET 1000 V Enhancement, 3-Pin TO-264 IXTK22N100L
- IXYS Single HiperFET 15 A 3-Pin TO-247 IXFH15N100Q3
- IXYS Single HiperFET 38 A 4-Pin SOT-227 IXFN44N100Q3
- IXYS Single X2-Class 1 N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IXTH12N65X2
- IXYS Single HiperFET 120 A 3-Pin PLUS247 IXFX120N30P3
- IXYS Single HiperFET 14 A 3-Pin TO-247 IXFH14N60P
- IXYS Single HiperFET 82 A 3-Pin PLUS264 IXFB82N60Q3
- IXYS HiperFET N-Channel MOSFET 500 V Enhancement, 3-Pin TO-264