P-Channel MOSFET, 120 mA, 60 V, 3-Pin SOT-23 onsemi NDS0610
- RS Stock No.:
- 671-1074
- Mfr. Part No.:
- NDS0610
- Manufacturer:
- onsemi
Bulk discount available
Subtotal (1 pack of 20 units)**
PHP283.10
(exc. VAT)
PHP317.08
(inc. VAT)
1860 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for over PHP7,000.00 (ex VAT)
Units | Per Unit | Per Pack** |
---|---|---|
20 - 20 | PHP14.155 | PHP283.10 |
40 - 80 | PHP13.731 | PHP274.62 |
100 - 180 | PHP13.32 | PHP266.40 |
200 - 380 | PHP12.92 | PHP258.40 |
400 + | PHP12.533 | PHP250.66 |
**price indicative
- RS Stock No.:
- 671-1074
- Mfr. Part No.:
- NDS0610
- Manufacturer:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | onsemi | |
Channel Type | P | |
Maximum Continuous Drain Current | 120 mA | |
Maximum Drain Source Voltage | 60 V | |
Package Type | SOT-23 | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 10 Ω | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 360 mW | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 1.8 nC @ 10 V | |
Width | 1.3mm | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Length | 2.92mm | |
Minimum Operating Temperature | -55 °C | |
Height | 0.93mm | |
Select all | ||
---|---|---|
Manufacturer onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 120 mA | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 10 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 360 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 1.8 nC @ 10 V | ||
Width 1.3mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Length 2.92mm | ||
Minimum Operating Temperature -55 °C | ||
Height 0.93mm | ||
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