onsemi NDS0605 Type P-Channel MOSFET, 120 mA, 60 V Enhancement, 3-Pin SOT-23 NDS0610
- RS Stock No.:
- 671-1074
- Mfr. Part No.:
- NDS0610
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 20 units)*
PHP288.80
(exc. VAT)
PHP323.40
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 1,800 unit(s) ready to ship from another location
- Plus 31,660 unit(s) shipping from January 01, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 20 | PHP14.44 | PHP288.80 |
| 40 - 80 | PHP14.007 | PHP280.14 |
| 100 - 180 | PHP13.588 | PHP271.76 |
| 200 - 380 | PHP13.18 | PHP263.60 |
| 400 + | PHP12.785 | PHP255.70 |
*price indicative
- RS Stock No.:
- 671-1074
- Mfr. Part No.:
- NDS0610
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | NDS0605 | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 10Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -1.5V | |
| Maximum Power Dissipation Pd | 360mW | |
| Typical Gate Charge Qg @ Vgs | 1.8nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 2.92mm | |
| Width | 1.3 mm | |
| Height | 0.93mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series NDS0605 | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 10Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -1.5V | ||
Maximum Power Dissipation Pd 360mW | ||
Typical Gate Charge Qg @ Vgs 1.8nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 2.92mm | ||
Width 1.3 mm | ||
Height 0.93mm | ||
Automotive Standard No | ||
Enhancement Mode P-Channel MOSFET, ON Semiconductor
ON Semiconductors range of P-Channel MOSFETS are produced using ON Semis proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.
Features and Benefits:
• Voltage controlled P-Channel small signal switch
• High-Density cell design
• High saturation current
• Superior switching
• Great rugged and reliable performance
• DMOS technology
Applications:
• Load Switching
• DC/DC converter
• Battery protection
• Power management control
• DC motor control
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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