onsemi FDS Type P-Channel MOSFET, 8.8 A, 30 V Enhancement, 8-Pin SOIC
- RS Stock No.:
- 671-0508P
- Mfr. Part No.:
- FDS4435BZ
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal 25 units (supplied on a continuous strip)*
PHP1,117.90
(exc. VAT)
PHP1,252.05
(inc. VAT)
FREE delivery for orders over ₱5,000.00
Supply shortage
Due to limitations in the supply chain, stock is being assigned as it becomes available.
Units | Per Unit |
|---|---|
| 25 - 95 | PHP44.716 |
| 100 - 245 | PHP43.372 |
| 250 - 495 | PHP42.07 |
| 500 + | PHP40.808 |
*price indicative
- RS Stock No.:
- 671-0508P
- Mfr. Part No.:
- FDS4435BZ
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8.8A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Series | FDS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4mm | |
| Height | 1.5mm | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8.8A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Series FDS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Gate Source Voltage Vgs 25V | ||
Maximum Operating Temperature 150°C | ||
Width 4mm | ||
Height 1.5mm | ||
Standards/Approvals No | ||
Length 5mm | ||
Automotive Standard No | ||
Automotive P-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductor is providing solutions that solve complex challenges in the automotive market With a thorough command of quality, safety, and reliability standards.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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