onsemi Isolated PowerTrench 2 N-Channel MOSFET, 750 mA, 30 V Enhancement, 6-Pin SOT-363 FDG8850NZ

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Subtotal 20 units (supplied on a continuous strip)*

PHP481.00

(exc. VAT)

PHP538.80

(inc. VAT)

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Units
Per Unit
20 - 40PHP24.05
50 - 90PHP23.329
100 - 190PHP22.63
200 +PHP21.952

*price indicative

Packaging Options:
RS Stock No.:
671-0362P
Mfr. Part No.:
FDG8850NZ
Manufacturer:
onsemi
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Brand

onsemi

Transistor Configuration

Isolated

Series

PowerTrench

Number of Elements per Chip

2

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current (Id)

750 mA

Maximum Drain Source Voltage (Vds)

30 V

Channel Mode

Enhancement

Pin Count

6

Package Type

SOT-363

Height

1 mm

Length

2 mm

Maximum Drain Source Resistance (Rds)

400 mΩ

Maximum Gate Source Voltage (Vgs)

12 V, -12 V

Maximum Operating Temperature

150 °C

Maximum Power Dissipation (Pd)

360 mW

Minimum Operating Temperature

-55 °C

Mount Type

Surface

Width

1.25 mm

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor


ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.

The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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