DiodesZetex ZXMP6A13F Type P-Channel MOSFET, 1.1 A, 60 V Enhancement, 3-Pin SOT-23 ZXMP6A13FTA
- RS Stock No.:
- 669-7543
- Mfr. Part No.:
- ZXMP6A13FTA
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
PHP611.325
(exc. VAT)
PHP684.675
(inc. VAT)
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Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 25 | PHP24.453 | PHP611.33 |
| 50 - 100 | PHP23.72 | PHP593.00 |
| 125 - 225 | PHP23.009 | PHP575.23 |
| 250 - 475 | PHP22.319 | PHP557.98 |
| 500 + | PHP21.65 | PHP541.25 |
*price indicative
- RS Stock No.:
- 669-7543
- Mfr. Part No.:
- ZXMP6A13FTA
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 1.1A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | ZXMP6A13F | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 400mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 806mW | |
| Forward Voltage Vf | -0.95V | |
| Typical Gate Charge Qg @ Vgs | 5.9nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 1.4 mm | |
| Height | 1mm | |
| Length | 3.05mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 1.1A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series ZXMP6A13F | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 400mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 806mW | ||
Forward Voltage Vf -0.95V | ||
Typical Gate Charge Qg @ Vgs 5.9nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 1.4 mm | ||
Height 1mm | ||
Length 3.05mm | ||
Automotive Standard AEC-Q101 | ||
P-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Related links
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