Sanyo Dual N-Channel MOSFET Transistor, 2 A, 20 V, 6-Pin CPH CPH6602-TL-E
- RS Stock No.:
- 664-0398
- Mfr. Part No.:
- CPH6602-TL-E
- Manufacturer:
- Sanyo
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- RS Stock No.:
- 664-0398
- Mfr. Part No.:
- CPH6602-TL-E
- Manufacturer:
- Sanyo
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Sanyo | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 2 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | CPH | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 180 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 900 mW | |
| Maximum Gate Source Voltage | -10 V, +10 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 1.6mm | |
| Length | 2.9mm | |
| Number of Elements per Chip | 2 | |
| Typical Gate Charge @ Vgs | 2.7 nC @ 4 V | |
| Height | 0.9mm | |
| Select all | ||
|---|---|---|
Brand Sanyo | ||
Channel Type N | ||
Maximum Continuous Drain Current 2 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type CPH | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 180 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 900 mW | ||
Maximum Gate Source Voltage -10 V, +10 V | ||
Maximum Operating Temperature +150 °C | ||
Width 1.6mm | ||
Length 2.9mm | ||
Number of Elements per Chip 2 | ||
Typical Gate Charge @ Vgs 2.7 nC @ 4 V | ||
Height 0.9mm | ||
- COO (Country of Origin):
- JP
Dual N-Channel MOSFET, Sanyo Semiconductor
MOSFET Transistors, Sanyo Semiconductor
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