onsemi PowerTrench Type N-Channel MOSFET, 170 mA, 100 V Enhancement, 3-Pin SOT-23 BSS123LT1G
- RS Stock No.:
- 545-0135
- Mfr. Part No.:
- BSS123LT1G
- Manufacturer:
- onsemi
This image is representative of the product range
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Subtotal (1 pack of 10 units)*
PHP86.24
(exc. VAT)
PHP96.59
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 2,910 unit(s) ready to ship from another location
- Plus 45,020 unit(s) shipping from January 01, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 10 | PHP8.624 | PHP86.24 |
| 20 - 40 | PHP8.366 | PHP83.66 |
| 50 - 90 | PHP8.116 | PHP81.16 |
| 100 - 190 | PHP7.872 | PHP78.72 |
| 200 + | PHP7.636 | PHP76.36 |
*price indicative
- RS Stock No.:
- 545-0135
- Mfr. Part No.:
- BSS123LT1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 170mA | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | PowerTrench | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 225mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 160nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.94mm | |
| Width | 1.3 mm | |
| Length | 2.9mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 170mA | ||
Maximum Drain Source Voltage Vds 100V | ||
Series PowerTrench | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 225mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 160nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 0.94mm | ||
Width 1.3 mm | ||
Length 2.9mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
RoHS Status: Exempt
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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