Vishay IRFI Type N-Channel MOSFET, 9.8 A, 200 V Enhancement, 3-Pin TO-220 IRFI640GPBF
- RS Stock No.:
- 542-9664
- Distrelec Article No.:
- 301-91-576
- Mfr. Part No.:
- IRFI640GPBF
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 unit)*
PHP139.40
(exc. VAT)
PHP156.13
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 776 unit(s) shipping from May 15, 2026
- Plus 1,000 unit(s) shipping from November 13, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 1 - 9 | PHP139.40 |
| 10 - 49 | PHP135.21 |
| 50 - 99 | PHP131.16 |
| 100 - 249 | PHP127.23 |
| 250 + | PHP123.42 |
*price indicative
- RS Stock No.:
- 542-9664
- Distrelec Article No.:
- 301-91-576
- Mfr. Part No.:
- IRFI640GPBF
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9.8A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | IRFI | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 40W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 2V | |
| Typical Gate Charge Qg @ Vgs | 70nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 9.8mm | |
| Standards/Approvals | No | |
| Width | 4.83 mm | |
| Length | 10.63mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9.8A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series IRFI | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 40W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 2V | ||
Typical Gate Charge Qg @ Vgs 70nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 9.8mm | ||
Standards/Approvals No | ||
Width 4.83 mm | ||
Length 10.63mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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