Vishay Single 1 N-Channel MOSFET, 8.5 A, 650 V Enhancement, 3-Pin TO-220AB IRFB9N65APBF

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We don't know if this item will be back in stock, RS intend to remove it from our range soon.
Packaging Options:
RS Stock No.:
541-1938
Mfr. Part No.:
IRFB9N65APBF
Manufacturer:
Vishay
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Brand

Vishay

Transistor Configuration

Single

Number of Elements per Chip

1

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current (Id)

8.5 A

Maximum Drain Source Voltage (Vds)

650 V

Channel Mode

Enhancement

Pin Count

3

Package Type

TO-220AB

Maximum Drain Source Resistance (Rds)

930 mΩ

Maximum Gate Source Voltage (Vgs)

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Maximum Power Dissipation (Pd)

167 W

Minimum Operating Temperature

-55 °C

Mount Type

Through Hole

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor


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