P-Channel MOSFET, 1.1 A, 60 V, 4-Pin HVMDIP Vishay IRFD9014PBF
- RS Stock No.:
- 541-0733P
- Mfr. Part No.:
- IRFD9014PBF
- Manufacturer:
- Vishay
Bulk discount available
Subtotal (10 tapes of 1 unit)**
PHP673.30
(exc. VAT)
PHP754.10
(inc. VAT)
Available for back order.*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for over PHP7,000.00 (ex VAT)
Units | Per Unit |
|---|---|
| 10 - 49 | PHP65.30 |
| 50 - 99 | PHP63.35 |
| 100 - 249 | PHP61.45 |
| 250 + | PHP59.59 |
**price indicative
- RS Stock No.:
- 541-0733P
- Mfr. Part No.:
- IRFD9014PBF
- Manufacturer:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | Vishay | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 1.1 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | HVMDIP | |
| Mounting Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 500 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 1.3 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Width | 6.29mm | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 12 nC @ 10 V | |
| Length | 5mm | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 3.37mm | |
Select all | ||
|---|---|---|
Manufacturer Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 1.1 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type HVMDIP | ||
Mounting Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 500 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 1.3 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Width 6.29mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 12 nC @ 10 V | ||
Length 5mm | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 3.37mm | ||