P-Channel MOSFET, 130 mA, 50 V, 3-Pin SOT-23 Nexperia BSS84,215
- RS Stock No.:
- 436-8091
- Mfr. Part No.:
- BSS84,215
- Manufacturer:
- Nexperia
Bulk discount available
Subtotal (1 pack of 10 units)**
PHP98.00
(exc. VAT)
PHP109.80
(inc. VAT)
2490 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for over PHP7,000.00 (ex VAT)
Units | Per Unit | Per Pack** |
|---|---|---|
| 10 - 10 | PHP9.80 | PHP98.00 |
| 20 - 40 | PHP9.506 | PHP95.06 |
| 50 - 90 | PHP9.22 | PHP92.20 |
| 100 - 190 | PHP8.943 | PHP89.43 |
| 200 + | PHP8.676 | PHP86.76 |
**price indicative
- RS Stock No.:
- 436-8091
- Mfr. Part No.:
- BSS84,215
- Manufacturer:
- Nexperia
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | Nexperia | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 130 mA | |
| Maximum Drain Source Voltage | 50 V | |
| Package Type | SOT-23 (TO-236AB) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 10 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 0.8V | |
| Maximum Power Dissipation | 250 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Length | 3mm | |
| Maximum Operating Temperature | +150 °C | |
| Width | 1.4mm | |
| Transistor Material | Si | |
| Height | 1mm | |
| Minimum Operating Temperature | -65 °C | |
Select all | ||
|---|---|---|
Manufacturer Nexperia | ||
Channel Type P | ||
Maximum Continuous Drain Current 130 mA | ||
Maximum Drain Source Voltage 50 V | ||
Package Type SOT-23 (TO-236AB) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 10 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 0.8V | ||
Maximum Power Dissipation 250 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Length 3mm | ||
Maximum Operating Temperature +150 °C | ||
Width 1.4mm | ||
Transistor Material Si | ||
Height 1mm | ||
Minimum Operating Temperature -65 °C | ||
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