Vishay SQJQ936EL 2 Type N-Channel MOSFET, 100 A, 40 V Enhancement, 4-Pin 8x8L SQJQ936EL-T1_GE3
- RS Stock No.:
- 280-0022
- Mfr. Part No.:
- SQJQ936EL-T1_GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Subtotal (1 reel of 2000 units)*
PHP287,844.00
(exc. VAT)
PHP322,386.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from July 27, 2026
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Units | Per Unit | Per Reel* |
|---|---|---|
| 2000 + | PHP143.922 | PHP287,844.00 |
*price indicative
- RS Stock No.:
- 280-0022
- Mfr. Part No.:
- SQJQ936EL-T1_GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | 8x8L | |
| Series | SQJQ936EL | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 40 V | |
| Forward Voltage Vf | 0V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, AEC-Q101, 100 percent Rg and UIS tested | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type 8x8L | ||
Series SQJQ936EL | ||
Mount Type Surface | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 40 V | ||
Forward Voltage Vf 0V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, AEC-Q101, 100 percent Rg and UIS tested | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Vishay Automotive MOSFET is a Dual N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
100 percent Rg and UIS tested
AEC-Q101 qualified
Fully lead (Pb)-free device
Related links
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