Vishay SIRS N-Channel MOSFET, 225 A, 100 V Enhancement, 8-Pin SO-8 SIRS5100DP-T1-GE3

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Subtotal (50 units, supplied on a continuous strip)*

PHP10,414.00

(exc. VAT)

PHP11,663.50

(inc. VAT)

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  • 2,358 unit(s) ready to ship from another location
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Units
Per Unit
50 - 98PHP208.28
100 - 248PHP184.68
250 - 998PHP180.605
1000 +PHP177.35

*price indicative

Packaging Options:
RS Stock No.:
279-9971P
Mfr. Part No.:
SIRS5100DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

225A

Maximum Drain Source Voltage Vds

100V

Package Type

SO-8

Series

SIRS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0025Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

240W

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

102nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

5mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

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