Vishay SIJ Type N-Channel MOSFET, 56.7 A, 100 V Enhancement, 7-Pin SO-8L SIJ4108DP-T1-GE3

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Subtotal (1 pack of 4 units)*

PHP460.992

(exc. VAT)

PHP516.312

(inc. VAT)

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Units
Per Unit
Per Pack*
4 - 56PHP115.248PHP460.99
60 - 96PHP109.948PHP439.79
100 - 236PHP98.025PHP392.10
240 - 996PHP96.258PHP385.03
1000 +PHP94.488PHP377.95

*price indicative

Packaging Options:
RS Stock No.:
279-9934
Mfr. Part No.:
SIJ4108DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

56.7A

Maximum Drain Source Voltage Vds

100V

Series

SIJ

Package Type

SO-8L

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

0.009Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

69.4W

Typical Gate Charge Qg @ Vgs

40nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

5.13mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

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