Vishay SIHK N-Channel MOSFET, 18 A, 600 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK155N60EF-T1GE3

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Subtotal (50 units, supplied on a continuous strip)*

PHP19,790.00

(exc. VAT)

PHP22,165.00

(inc. VAT)

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  • 2,000 unit(s) ready to ship from another location
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Units
Per Unit
50 - 99PHP395.80
100 - 249PHP387.97
250 - 999PHP380.16
1000 +PHP372.33

*price indicative

Packaging Options:
RS Stock No.:
279-9918P
Mfr. Part No.:
SIHK155N60EF-T1GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

600V

Package Type

PowerPAK 10 x 12

Series

SIHK

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.159Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30V

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

38nC

Maximum Power Dissipation Pd

156W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

9.9mm

Automotive Standard

No

The Vishay MOSFET is a E series power MOSFET with Fast body diode and the transistor in it is made up of material known as silicon.

4th generation E series technology

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance

Avalanche energy rated

Reduced switching and conduction losses

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