Vishay SIA Type N-Channel MOSFET, 8.8 A, 100 V Enhancement, 7-Pin SC-70-6L SIA112LDJ-T1-GE3

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Subtotal (1 pack of 10 units)*

PHP349.86

(exc. VAT)

PHP391.84

(inc. VAT)

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Last RS stock
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Units
Per Unit
Per Pack*
10 - 40PHP34.986PHP349.86
50 - 90PHP26.144PHP261.44
100 - 240PHP23.197PHP231.97
250 - 990PHP22.685PHP226.85
1000 +PHP22.174PHP221.74

*price indicative

Packaging Options:
RS Stock No.:
279-9900
Mfr. Part No.:
SIA112LDJ-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

8.8A

Maximum Drain Source Voltage Vds

100V

Series

SIA

Package Type

SC-70-6L

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

0.119Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

15.6W

Typical Gate Charge Qg @ Vgs

5.4nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

2.05mm

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

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