Infineon BSZ12DN20NS3 G Type N-Channel MOSFET, 11.3 A, 200 V Enhancement, 8-Pin PG-TSDSON-8 BSZ12DN20NS3GATMA1
- RS Stock No.:
- 273-5249
- Mfr. Part No.:
- BSZ12DN20NS3GATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 273-5249
- Mfr. Part No.:
- BSZ12DN20NS3GATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11.3A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | BSZ12DN20NS3 G | |
| Package Type | PG-TSDSON-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 6.5nC | |
| Maximum Power Dissipation Pd | 50W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.5mm | |
| Width | 40 mm | |
| Length | 40mm | |
| Standards/Approvals | IEC61249-2-21, JEDEC1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11.3A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series BSZ12DN20NS3 G | ||
Package Type PG-TSDSON-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 6.5nC | ||
Maximum Power Dissipation Pd 50W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1.5mm | ||
Width 40 mm | ||
Length 40mm | ||
Standards/Approvals IEC61249-2-21, JEDEC1 | ||
Automotive Standard No | ||
The Infineon MOSFET is a N channel power MOSFET. This MOSFET has an excellent gate charge. It is qualified according to JEDEC for target applications and 150 degree Celsius operating temperature. It is a optimized for dc to dc conversion.
Halogen free
RoHS compliant
Pb free lead plating
Very low on resistance
Related links
- Infineon BSZ12DN20NS3 G Type N-Channel MOSFET 200 V Enhancement, 8-Pin PG-TSDSON-8
- Infineon ISZ Type N-Channel MOSFET 30 V Enhancement, 8-Pin PG-TSDSON-8 ISZ056N03LF2SATMA1
- Infineon ISZ Type N-Channel Power Transistor 30 V Enhancement, 8-Pin PG-TSDSON-8 ISZ033N03LF2SATMA1
- Infineon ISZ Type N-Channel Power Transistor 30 V Enhancement, 8-Pin PG-TSDSON-8 ISZ028N03LF2SATMA1
- Infineon ISZ Type N-Channel MOSFET 100 V Enhancement, 8-Pin PG-TSDSON-8 ISZ113N10NM5LF2ATMA1
- Infineon OptiMOS 6 Power Transistor Type N-Channel MOSFET 120 V Enhancement, 8-Pin PG-TSDSON-8 ISZ106N12LM6ATMA1
- Infineon OptiMOS 6 Power Transistor Type N-Channel MOSFET 120 V Enhancement, 8-Pin PG-TSDSON-8 ISZ330N12LM6ATMA1
- Infineon BSC12DN20NS3 G Type N-Channel MOSFET 200 V Enhancement, 8-Pin TDSON BSC12DN20NS3GATMA1