Infineon ISZ Type N-Channel Power Transistor, 109 A, 30 V Enhancement, 8-Pin PG-TSDSON-8 ISZ033N03LF2SATMA1

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PHP576.90

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PHP646.10

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10 - 90PHP57.69PHP576.90
100 - 240PHP54.81PHP548.10
250 - 490PHP50.795PHP507.95
500 - 990PHP46.693PHP466.93
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RS Stock No.:
348-903
Mfr. Part No.:
ISZ033N03LF2SATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

Power Transistor

Maximum Continuous Drain Current Id

109A

Maximum Drain Source Voltage Vds

30V

Series

ISZ

Package Type

PG-TSDSON-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.3mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

71W

Typical Gate Charge Qg @ Vgs

21nC

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Standards/Approvals

IEC61249‑2‑21, RoHS, JEDEC

Automotive Standard

No

COO (Country of Origin):
CN
The Infineon StrongIRFET 2 power MOSFET 30 V in PQFN 3.3 x 3.3 package. Infineon’s StrongIRFET 2 power MOSFET 30 V technology features a best-in-class RDS(on) of 3.3 mOhm in a PQFN 3.3 x 3.3 package. This product addresses a broad range of applications from low to high switching frequency.

General purpose products

Excellent robustness

Superior price/performance ratio

Broad availability at distributors

Standard packages and pin out

High manufacturing and supply standards

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