STMicroelectronics STripFETTM F7 Type N-Channel MOSFET, 100 A, 40 V Enhancement, 4-Pin ECOPACK STK184N4F7AG
- RS Stock No.:
- 273-5096P
- Mfr. Part No.:
- STK184N4F7AG
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 273-5096P
- Mfr. Part No.:
- STK184N4F7AG
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | STripFETTM F7 | |
| Package Type | ECOPACK | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 2.0mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Maximum Power Dissipation Pd | 136W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 | |
| Length | 6.2mm | |
| Height | 1.2mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series STripFETTM F7 | ||
Package Type ECOPACK | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 2.0mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Maximum Power Dissipation Pd 136W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 | ||
Length 6.2mm | ||
Height 1.2mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics automotive-grade N-channel power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for Faster and more efficient switching.
AEC-Q101 qualified
Excellent FoM
High avalanche ruggedness
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