Infineon IPP Type N-Channel MOSFET, 36.23 A, 700 V Enhancement, 3-Pin PG-TO220-3

This image is representative of the product range

Bulk discount available

Subtotal (1 unit)*

PHP375.93

(exc. VAT)

PHP421.04

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 400 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
1 - 9PHP375.93
10 - 24PHP341.83
25 - 49PHP313.02
50 - 99PHP288.77
100 +PHP268.31

*price indicative

RS Stock No.:
273-3020
Mfr. Part No.:
IPP65R060CFD7XKSA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

36.23A

Maximum Drain Source Voltage Vds

700V

Package Type

PG-TO220-3

Series

IPP

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

60mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

68nC

Maximum Power Dissipation Pd

171W

Maximum Operating Temperature

150°C

Standards/Approvals

JEDEC, RoHS

The Infineon 650V cool MOS CFD7 super junction MOSFET in a TO-220 package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar and EV charging stations, in which it enables significant efficiency improvement

Excellent hard-commutation ruggedness

Extra safety margin for designs with increased bus voltage

Enabling increased power density

Related links