Infineon IPN Type N-Channel MOSFET, 3.6 A, 650 V Enhancement, 3-Pin PG-SOT223

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Subtotal (1 pack of 10 units)*

PHP285.95

(exc. VAT)

PHP320.26

(inc. VAT)

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  • 2,990 unit(s) ready to ship from another location
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Units
Per Unit
Per Pack*
10 - 40PHP28.595PHP285.95
50 - 90PHP24.203PHP242.03
100 - 240PHP22.489PHP224.89
250 - 990PHP22.061PHP220.61
1000 +PHP21.633PHP216.33

*price indicative

RS Stock No.:
273-3016
Mfr. Part No.:
IPN60R1K5PFD7SATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

3.6A

Maximum Drain Source Voltage Vds

650V

Package Type

PG-SOT223

Series

IPN

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.5Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Maximum Power Dissipation Pd

6W

Typical Gate Charge Qg @ Vgs

4.6nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1V

Maximum Operating Temperature

150°C

Standards/Approvals

JEDEC Standard

Automotive Standard

No

The Infineon 600V cool MOS PFD7 super junction MOSFET complements the cool MOS 7 offering for consumer applications.

BOM cost reduction and easy manufacturing

Robustness and reliability

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