Infineon BSL606SN N-Channel MOSFET, 4.5 A, 60 V Enhancement, 6-Pin PG-TSOP-6 BSL606SNH6327XTSA1

RS Stock No.:: 273-2853
Mfr. Part No.:: BSL606SNH6327XTSA1
Manufacturer:: Infineon

Infineon BSL606SN N-Channel MOSFET, 4.5 A, 60 V Enhancement, 6-Pin PG-TSOP-6 BSL606SNH6327XTSA1

This image is representative of the product range

Subtotal (1 reel of 3000 units)*

PHP42,840.00

(exc. VAT)

PHP47,970.00

(inc. VAT)

FREE delivery for orders over ₱5,000.00

Temporarily out of stock

Shipping from May 28, 2027

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per Unit	Per Reel*
3000 +	PHP14.28	PHP42,840.00

*price indicative

RS Stock No.:: 273-2853
Mfr. Part No.:: BSL606SNH6327XTSA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	4.5A
	Maximum Drain Source Voltage Vds	60V
	Package Type	PG-TSOP-6
	Series	BSL606SN
	Mount Type	Surface
	Pin Count	6
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	2W
	Typical Gate Charge Qg @ Vgs	3.7nC
	Forward Voltage Vf	1.1V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Length	40mm
	Height	1.5mm
	Width	40mm
	Standards/Approvals	AEC-Q101
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 4.5A
	Maximum Drain Source Voltage Vds 60V
	Package Type PG-TSOP-6
	Series BSL606SN
	Mount Type Surface
	Pin Count 6
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 2W
	Typical Gate Charge Qg @ Vgs 3.7nC
	Forward Voltage Vf 1.1V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Length 40mm
	Height 1.5mm
	Width 40mm
	Standards/Approvals AEC-Q101
	Automotive Standard AEC-Q101

Datasheet - BSL606SNH6327XTSA1

Infineon BSL606SN Series MOSFET, 60V Maximum Drain-Source Voltage, 4.5A Maximum Continuous Drain Current - BSL606SNH6327XTSA1

This n-channel enhancement MOSFET is designed for surface-mounted power switching in automotive environments. It delivers moderate current handling and voltage capability with a low forward voltage characteristic, suitable for control and load-switching roles across a wide ambient range. The device is packaged for Compact assembly and meets automotive stress-test qualification for use in temperature-extreme applications.

Features and Benefits:

• 60V Maximum Drain-Source Voltage provides robust voltage headroom
• 4.5A Maximum Continuous Drain Current enables moderate current switching
• 1.1V Forward Voltage minimises conduction losses during operation
• 3.7nC Typical Gate Charge enables Faster switching response
• 2W Maximum Power Dissipation allows continuous thermal handling

Applications

• Suitable for automotive power distribution modules
• Ideal for DC load switching in control units
• Used with Compact surface assemblies requiring space savings
• Can be used for motor driver low-side switching tasks

What gate drive limitations should I consider?

The device accepts up to 20V between gate and source, so gate-drive circuits must remain within this limit.

How does the device handle temperature extremes?

It operates across a range from -55°C to 150°C, allowing use in harsh ambient and under‑bonnet conditions.

What mounting method is required for assembly?

It is intended for surface mounting in a PG-TSOP-6 package to suit automated PCB assembly.

What channel and mode does it use for switching?

The transistor uses an n-type channel in enhancement mode for conventional MOSFET switching behaviour.

Are there specific industry approvals for automotive use?

It conforms to AEC‑Q101 qualification for acceptance in automotive electronic applications.