Infineon OptiMOS-T2 Type N-Channel Power MOSFET, 20 A, 40 V Enhancement, 8-Pin TDSON-8-4
- RS Stock No.:
- 273-2628
- Mfr. Part No.:
- BSC076N04NDATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP360.36
(exc. VAT)
PHP403.605
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 90 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 45 | PHP72.072 | PHP360.36 |
| 50 - 495 | PHP65.484 | PHP327.42 |
| 500 - 995 | PHP51.40 | PHP257.00 |
| 1000 - 2495 | PHP50.302 | PHP251.51 |
| 2500 + | PHP49.388 | PHP246.94 |
*price indicative
- RS Stock No.:
- 273-2628
- Mfr. Part No.:
- BSC076N04NDATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TDSON-8-4 | |
| Series | OptiMOS-T2 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 7.6mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 65W | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, IEC61249-2-21, DIN IEC 68-1: 55/175/56 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TDSON-8-4 | ||
Series OptiMOS-T2 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 7.6mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 65W | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, IEC61249-2-21, DIN IEC 68-1: 55/175/56 | ||
Automotive Standard No | ||
The Infineon Power MOSFET is a N channel 40 V power MOSFET. This MOSFET optimized for drives applications and it is 100 percent avalanche tested. It is qualified for industrial applications according to the relevant tests of JEDEC47 20 2.
Halogen free
RoHS compliant
Pb free lead plating
Fast switching MOSFETs
Superior thermal resistance
Related links
- Infineon OptiMOS-T2 Type N-Channel Power MOSFET 40 V Enhancement, 8-Pin TDSON-8-4 BSC076N04NDATMA1
- Infineon Enhancement Mode OptiMOS-T2 2 Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON
- Infineon Enhancement Mode OptiMOS-T2 2 Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON IPG20N04S4L08AATMA1
- Infineon OptiMOS 5 Type N-Channel Power MOSFET 150 V Enhancement, 8-Pin PG-TDSON-8 BSC152N15LS5ATMA1
- Infineon OptiMOS 5 Type N-Channel Power MOSFET 150 V Enhancement, 8-Pin PG-TDSON-8 BSC088N15LS5ATMA1
- Infineon OptiMOS 5 Type N-Channel Power MOSFET 150 V Enhancement, 8-Pin PG-TDSON-8 BSC105N15LS5ATMA1
- Infineon Dual OptiMOS-T2 2 Type N-Channel Power Transistor 100 V Enhancement, 8-Pin TDSON
- Infineon Dual OptiMOS-T2 2 Type N-Channel Power Transistor 100 V Enhancement, 8-Pin TDSON