Infineon OptiMOS-T2 Type N-Channel Power MOSFET, 20 A, 40 V Enhancement, 8-Pin TDSON-8-4 BSC076N04NDATMA1

This image is representative of the product range

Subtotal (1 reel of 5000 units)*

PHP315,560.00

(exc. VAT)

PHP353,425.00

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from March 23, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Reel*
5000 +PHP63.112PHP315,560.00

*price indicative

RS Stock No.:
273-2627
Mfr. Part No.:
BSC076N04NDATMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

40V

Series

OptiMOS-T2

Package Type

TDSON-8-4

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

7.6mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

28nC

Maximum Power Dissipation Pd

65W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS, IEC61249-2-21, DIN IEC 68-1: 55/175/56

Automotive Standard

No

The Infineon Power MOSFET is a N channel 40 V power MOSFET. This MOSFET optimized for drives applications and it is 100 percent avalanche tested. It is qualified for industrial applications according to the relevant tests of JEDEC47 20 2.

Halogen free

RoHS compliant

Pb free lead plating

Fast switching MOSFETs

Superior thermal resistance

Related links