Vishay SQS Type N-Channel MOSFET, 16 A, 80 V Enhancement, 8-Pin PowerPAK 1212-8W SQSA82CENW-T1_GE3
- RS Stock No.:
- 268-8375
- Mfr. Part No.:
- SQSA82CENW-T1_GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
PHP665.00
(exc. VAT)
PHP744.75
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 3,050 unit(s) shipping from March 16, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 25 | PHP26.60 | PHP665.00 |
| 50 - 75 | PHP25.802 | PHP645.05 |
| 100 - 225 | PHP24.254 | PHP606.35 |
| 250 - 975 | PHP22.071 | PHP551.78 |
| 1000 + | PHP19.423 | PHP485.58 |
*price indicative
- RS Stock No.:
- 268-8375
- Mfr. Part No.:
- SQSA82CENW-T1_GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PowerPAK 1212-8W | |
| Series | SQS | |
| Mount Type | PCB | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.073Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 27W | |
| Forward Voltage Vf | 0.8V | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 3.3mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PowerPAK 1212-8W | ||
Series SQS | ||
Mount Type PCB | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.073Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 27W | ||
Forward Voltage Vf 0.8V | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 3.3mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The Vishay automotive N channel TrenchFET power MOSFET is lead Pb and halogen free device. That is single configuration MOSFET and surface mount type device.
AEC Q101 qualified
ROHS compliant
Related links
- Vishay SQS Type N-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK 1212-8W SQSA82CENW-T1_GE3
- Vishay SQS Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212-8W SQS460CENW-T1_GE3
- Vishay SQS Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK 1212-8SLW SQS140ELNW-T1_GE3
- Vishay SQS Type N-Channel MOSFET 30 V Enhancement, 8-Pin 1212-8SLW SQS120ELNW-T1_GE3
- Vishay Type P-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK 1212-8W
- Vishay Type P-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK 1212-8W SQS405CENW-T1_GE3
- Vishay SQS Type P-Channel MOSFET 80 V Enhancement, 8-Pin 1212-8SLW SQS181ELNW-T1_GE3
- Vishay SQS484CENW Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK 1212