Vishay SQJ N-Channel MOSFET, 66 A, 80 V Enhancement, 4-Pin PowerPAK SO-8L SQJ186ELP-T1_GE3

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Subtotal 50 units (supplied on a continuous strip)*

PHP2,891.55

(exc. VAT)

PHP3,238.55

(inc. VAT)

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  • 2,980 unit(s) ready to ship from another location
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Units
Per Unit
50 - 90PHP57.831
100 - 240PHP46.027
250 - 990PHP45.092
1000 +PHP29.975

*price indicative

Packaging Options:
RS Stock No.:
268-8366P
Mfr. Part No.:
SQJ186ELP-T1_GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

66A

Maximum Drain Source Voltage Vds

80V

Package Type

PowerPAK SO-8L

Series

SQJ

Mount Type

PCB

Pin Count

4

Maximum Drain Source Resistance Rds

0.032Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

135W

Typical Gate Charge Qg @ Vgs

45nC

Maximum Operating Temperature

175°C

Length

4.9mm

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN
The Vishay automotive N channel TrenchFET generation 4 power MOSFET is lead Pb and halogen free device. It is single configuration device and that has independent of operating temperature.

AEC Q101 qualified

ROHS compliant

UIS tested 100 percent

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