Vishay SiR N-Channel MOSFET, 26.8 A, 150 V Enhancement, 8-Pin PowerPAK SO-8 SIR5710DP-T1-RE3

This image is representative of the product range

View all MOSFETs
Bulk discount available
View bulk pricing options

Subtotal 50 units (supplied on a continuous strip)*

PHP6,041.00

(exc. VAT)

PHP6,766.00

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 6,020 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per Unit
50 - 95PHP120.82
100 - 245PHP113.572
250 - 995PHP103.354
1000 +PHP90.952

*price indicative

Packaging Options:
RS Stock No.:
268-8335P
Mfr. Part No.:
SIR5710DP-T1-RE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

26.8A

Maximum Drain Source Voltage Vds

150V

Package Type

PowerPAK SO-8

Series

SiR

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0315Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

56.8W

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

15nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

5.15mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N channel TrenchFET generation 5 power MOSFET is lead Pb and halogen free device. It is used in applications such as synchronous rectification, motor drive control, power supplies.

Very low figure of merit

ROHS compliant

UIS tested 100 percent

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy