Vishay SIDR Type N-Channel MOSFET, 227 A, 60 V Enhancement, 8-Pin PowerPAK SO-8DC SIDR626EP-T1-RE3

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Subtotal (1 pack of 2 units)*

PHP342.06

(exc. VAT)

PHP383.10

(inc. VAT)

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Last RS stock
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Units
Per Unit
Per Pack*
2 - 48PHP171.03PHP342.06
50 - 98PHP165.90PHP331.80
100 - 248PHP155.945PHP311.89
250 - 998PHP141.91PHP283.82
1000 +PHP124.88PHP249.76

*price indicative

Packaging Options:
RS Stock No.:
268-8285
Mfr. Part No.:
SIDR626EP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

227A

Maximum Drain Source Voltage Vds

60V

Package Type

PowerPAK SO-8DC

Series

SIDR

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.00174Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

150W

Typical Gate Charge Qg @ Vgs

102nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

5.15mm

Automotive Standard

No

COO (Country of Origin):
TW
The Vishay N channel TrenchFET generation 4 power MOSFET has TOP side cooling feature provides additional venue for thermal transfer. It is used in applications such as synchronous rectification, motor drive switch, battery and load switch.

Tuned for the lowest figure of merit

ROHS compliant

UIS tested 100 percent

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