Vishay SIDR N-Channel MOSFET, 227 A, 60 V Enhancement, 8-Pin PowerPAK SO-8DC SIDR626EP-T1-RE3
- RS Stock No.:
- 268-8285
- Mfr. Part No.:
- SIDR626EP-T1-RE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
PHP588.09
(exc. VAT)
PHP658.66
(inc. VAT)
FREE delivery for orders over ₱5,000.00
Last RS stock
- Final 6 unit(s), ready to ship from another location
Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 48 | PHP294.045 | PHP588.09 |
| 50 - 98 | PHP285.225 | PHP570.45 |
| 100 - 248 | PHP268.115 | PHP536.23 |
| 250 - 998 | PHP243.99 | PHP487.98 |
| 1000 + | PHP214.71 | PHP429.42 |
*price indicative
- RS Stock No.:
- 268-8285
- Mfr. Part No.:
- SIDR626EP-T1-RE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 227A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK SO-8DC | |
| Series | SIDR | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00174Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 102nC | |
| Maximum Power Dissipation Pd | 150W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.15mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 227A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK SO-8DC | ||
Series SIDR | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00174Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 102nC | ||
Maximum Power Dissipation Pd 150W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Length 5.15mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TW
The Vishay N channel TrenchFET generation 4 power MOSFET has TOP side cooling feature provides additional venue for thermal transfer. It is used in applications such as synchronous rectification, motor drive switch, battery and load switch.
Tuned for the lowest figure of merit
ROHS compliant
UIS tested 100 percent
Related links
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