Microchip Type P-Channel MOSFET, -200 mA, 350 V MOSFET, 3-Pin SOT-23 TP5335K1-G
- RS Stock No.:
- 264-8932
- Mfr. Part No.:
- TP5335K1-G
- Manufacturer:
- Microchip
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Subtotal (1 pack of 10 units)*
PHP358.09
(exc. VAT)
PHP401.06
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 1,490 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 40 | PHP35.809 | PHP358.09 |
| 50 - 90 | PHP35.089 | PHP350.89 |
| 100 - 240 | PHP27.233 | PHP272.33 |
| 250 - 990 | PHP26.71 | PHP267.10 |
| 1000 + | PHP26.185 | PHP261.85 |
*price indicative
- RS Stock No.:
- 264-8932
- Mfr. Part No.:
- TP5335K1-G
- Manufacturer:
- Microchip
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -200mA | |
| Maximum Drain Source Voltage Vds | 350V | |
| Package Type | SOT-23 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | MOSFET | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.36W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -200mA | ||
Maximum Drain Source Voltage Vds 350V | ||
Package Type SOT-23 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Channel Mode MOSFET | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.36W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Microchip P-Channel low threshold, enhancement-mode (normally-off) MOSFET utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
High input impedance and high gain
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
Free from secondary breakdown
Related links
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