Microchip TP0620 Type P-Channel MOSFET, -175 A, 200 V Enhancement, 3-Pin TO-92 TP0620N3-G
- RS Stock No.:
- 264-8927
- Mfr. Part No.:
- TP0620N3-G
- Manufacturer:
- Microchip
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Subtotal (1 pack of 5 units)*
PHP545.49
(exc. VAT)
PHP610.95
(inc. VAT)
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In Stock
- 580 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 45 | PHP109.098 | PHP545.49 |
| 50 - 95 | PHP89.988 | PHP449.94 |
| 100 - 245 | PHP83.484 | PHP417.42 |
| 250 - 495 | PHP81.758 | PHP408.79 |
| 500 + | PHP80.164 | PHP400.82 |
*price indicative
- RS Stock No.:
- 264-8927
- Mfr. Part No.:
- TP0620N3-G
- Manufacturer:
- Microchip
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -175A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-92 | |
| Series | TP0620 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -175A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-92 | ||
Series TP0620 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Microchip P-Channel low threshold, enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Low threshold (-2.4V max.)
High input impedance
Low input capacitance (85pF typical)
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Related links
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