Infineon HEXFET Type N-Channel MOSFET, 29 A, 55 V Enhancement, 3-Pin TO-263 IRFZ34NSTRLPBF

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 10 units)*

PHP607.60

(exc. VAT)

PHP680.50

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 1,080 unit(s) shipping from December 29, 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Pack*
10 - 10PHP60.76PHP607.60
20 - 40PHP59.564PHP595.64
50 - 90PHP54.049PHP540.49
100 - 240PHP48.626PHP486.26
250 +PHP47.614PHP476.14

*price indicative

Packaging Options:
RS Stock No.:
262-6784
Mfr. Part No.:
IRFZ34NSTRLPBF
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

55V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.075Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Standards/Approvals

No

Distrelec Product Id

304-41-681

Automotive Standard

No

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. This design has features such as 175°C operating temperature, fast switching speed.

Fully avalanche rated

Related links