Infineon iPB Type N-Channel MOSFET, 197 A, 40 V Enhancement, 3-Pin TO-263 IPB012N04NF2SATMA1

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Subtotal (1 pack of 2 units)*

PHP364.56

(exc. VAT)

PHP408.30

(inc. VAT)

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  • 800 unit(s) ready to ship from another location
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Units
Per Unit
Per Pack*
2 - 8PHP182.28PHP364.56
10 - 48PHP176.815PHP353.63
50 - 98PHP166.205PHP332.41
100 - 248PHP151.245PHP302.49
250 +PHP133.095PHP266.19

*price indicative

Packaging Options:
RS Stock No.:
262-5845
Mfr. Part No.:
IPB012N04NF2SATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

197A

Maximum Drain Source Voltage Vds

40V

Series

iPB

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.15mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon N channel power transistor is optimized for wide range of applications and it is 100 percent avalanche tested.

Pb-free lead plating

RoHS compliant

Halogen free according to IEC61249-2-21

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