Infineon iPB Type N-Channel MOSFET, 201 A, 40 V Enhancement, 3-Pin TO-263 IPB011N04NF2SATMA1

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Subtotal (1 pack of 2 units)*

PHP398.16

(exc. VAT)

PHP445.94

(inc. VAT)

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  • 800 unit(s) ready to ship from another location
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Units
Per Unit
Per Pack*
2 - 8PHP199.08PHP398.16
10 - 48PHP193.105PHP386.21
50 - 98PHP185.385PHP370.77
100 - 248PHP176.115PHP352.23
250 +PHP165.545PHP331.09

*price indicative

Packaging Options:
RS Stock No.:
262-5843
Mfr. Part No.:
IPB011N04NF2SATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

201A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-263

Series

iPB

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.15mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon N channel power transistor is optimized for wide range of applications and it is 100 percent avalanche tested.

Pb-free lead plating

RoHS compliant

Halogen free according to IEC61249-2-21

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