STMicroelectronics N-Channel MOSFET, 7 A, 1.2 kV Enhancement, 3-Pin Tape & Reel

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Subtotal (10 units, supplied on a continuous strip)*

PHP7,545.30

(exc. VAT)

PHP8,450.70

(inc. VAT)

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  • 566 unit(s) ready to ship from another location
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Units
Per Unit
10 - 99PHP754.53
100 - 249PHP716.71
250 - 499PHP680.40
500 +PHP646.33

*price indicative

Packaging Options:
RS Stock No.:
261-5047P
Mfr. Part No.:
STH12N120K5-2AG
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

7A

Maximum Drain Source Voltage Vds

1.2kV

Package Type

Tape & Reel

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.9Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

36nC

Maximum Gate Source Voltage Vgs

30V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

4.7mm

Width

10.4mm

Length

15.8mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics high voltage N-channel power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

AEC-Q101 qualified

Industry’s lowest RDS(on) x area

Industry’s best FoM (figure of merit)

Ultra-low gate charge

100% avalanche tested

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