Infineon IPT Type N-Channel MOSFET, 143 A, 150 V, 8-Pin HSOG

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Subtotal (1 reel of 1800 units)*

PHP316,805.40

(exc. VAT)

PHP354,821.40

(inc. VAT)

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Per Reel*
1800 - 1800PHP176.003PHP316,805.40
3600 - 3600PHP167.203PHP300,965.40
5400 +PHP158.843PHP285,917.40

*price indicative

RS Stock No.:
259-2737
Mfr. Part No.:
IPTG054N15NM5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

143A

Maximum Drain Source Voltage Vds

150V

Series

IPT

Package Type

HSOG

Pin Count

8

Maximum Drain Source Resistance Rds

55.4mΩ

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

250W

Typical Gate Charge Qg @ Vgs

58nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.83V

Maximum Operating Temperature

175°C

Length

10.1mm

Width

8.75 mm

Standards/Approvals

RoHS, IEC 61249-2-21

Height

2.4mm

Automotive Standard

No

The Infineon OptiMOS 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in telecom and server power supply application, but also the ideal choice for other applications such as solar, low voltage drives and laptop adapter. With a broad package portfolio, this family of power MOSFETs offers the industry’s lowest RDS(on). One of the biggest contributors to this industry leading figure of merit (FOM) is the low on-state resistance with a value as low as 2.7 mΩ in the SuperSO8 package, providing the highest level of power density and efficiency.

N-channel, normal level

Very low on-resistance RDS(on)

Superior thermal resistance

100% avalanche tested

Pb-free lead plating; RoHS compliant

Halogen-free according to IEC61249-2-21

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