Infineon SPD15P10P Type P-Channel MOSFET, 15 A, 100 V Enhancement, 3-Pin TO-252
- RS Stock No.:
- 258-7100
- Mfr. Part No.:
- SPD15P10PLGBTMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Subtotal (1 reel of 2500 units)*
PHP144,060.00
(exc. VAT)
PHP161,347.50
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from May 25, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 2500 + | PHP57.624 | PHP144,060.00 |
*price indicative
- RS Stock No.:
- 258-7100
- Mfr. Part No.:
- SPD15P10PLGBTMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | SPD15P10P | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.20Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 230W | |
| Forward Voltage Vf | -0.96V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 47nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC Q101, Pb-free lead plating, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series SPD15P10P | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.20Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 230W | ||
Forward Voltage Vf -0.96V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 47nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC Q101, Pb-free lead plating, RoHS | ||
Automotive Standard No | ||
The Infineon SIPMOS power transistor belongs to highly innovative OptiMOS family P channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on state resistance and figure of merit characteristics.
Enhancement mode
Avalanche rated
Pb free lead plating
RoHS compliant
Related links
- Infineon SPD15P10P Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 SPD15P10PLGBTMA1
- Infineon SPD15P10P Type P-Channel MOSFET 100 V Enhancement, 3-Pin TSDSON
- Infineon SPD15P10P Type P-Channel MOSFET 100 V Enhancement, 3-Pin TSDSON SPD15P10PGBTMA1
- Infineon SPD15P10P Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- Infineon SPD15P10P Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 SPD04P10PGBTMA1
- Toshiba Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252
- Toshiba Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252 TJ15P04M3
- ROHM RD3G01BAT Type P-Channel MOSFET 40 V P, 3-Pin TO-252 RD3G01BATTL1